Research On Metal-semiconductor-metal Photodetctor With High-frequency Characteristic

With small size, high sensitivity, reliable performance and high speed,photoelectric detector has been widely used in military and national area. MSMphotoelectric detector (Metal-Semiconductor-Metal Photo Detector) with planarstructure is easily integrated with field effect transistor (FET) technology. In addition,compared with other structures, this device has very low capacitance per unit area,high bandwidth and high speed, which make it possible to make devices with largearea. What’s more, InGaAs MSM-PD not only has wide response range but also canefficiently work under normal temperature. The device has low dark current, highspeed and sensitivity, including many other excellent characteristics.We carry out ourresearch on high frequency characteristics of the InGaAsMSM-PD.Firstly, we introduce the status of infrared detectors during domestic and foreignand its research significance. Compared with APD, PIN, quantum-well and othertypes’ detectors, we draw the conclusion that MSM device has most preciousadvantage for short wave infrared detection. Secondly, we analyze the basic propertiesof InGaAs materials. Its crystal structure and lattice constant is analyzed respectively.Its energy band structure is also discussed. On this basis, we carried out the followingresearch on InGaAs MSM-PD under our existing conditions:1. We elaborate the basic structure and working principle of MSM device.Following are the detailed explanation of the main parameters ofMSM detector. Then, we analyze the equivalent circuit models of MSMdevices and give the full equivalent models.2. We design the basic structure of InGaAs MSM-PD which is simulated bythe software at the same time.3. We grow our wafer with the standard semiconductor wafers. Combined withthe advanced process technology, we fabricate our device and finish thepackage of our chip. 4. We build our experimental platforms to test the device performance,including the responsibility and temporal response and other parameters.Then，we mainly study its high-frequency characteristic.