Study On Physics And Devices Of InGaAs Infrared Detectors

The performances of InGaAs detectors have been studied in this dissertation, and the dark current and R₀A have been analyzed. Major contents and results of study are summarized as following:1. The dark current characteristics of In_0.53Ga_0.47As detectors under reverse bias voltage have been researched theoretically, and compared with the measured results of our fabricated devices. Results show that at lower bias the dark currents were dominated by generation-recombination mechanism, whereas dominated by band-to-band tunneling effects at higher bias. The simulated results were consistent with the measured data entirely. The influence of junction area as well as bonding pad size on the dark current has been analyzed. The temperature behavior of In_0.53Ga_0.47As detectors at various reverse bias voltage and wide temperature range has been investigated. The influence of noise mechanisms on R₀A product has also been discussed with variation of temperature and carrier concentration of i layer. The uniformity of In(0.53)Ga_0.47As detectors has been researched2. The performances of In_0.6Ga_0.4As, In_0.7Ga_0.3As and In_0.8Ga_0.2As detectors including spectral responses, I-V characteristics, C-V characteristics and RoA have been investigated. The dark current have been studied theoretically and compared with the measured results of our fabricated devices. The contributions of dark current in simulation include diffusion current, generation-recombination current, ohmic conduction leakage current, band-to-band tunneling current and trap assisted tunneling current. Temperature behavior of dark current has also been researched. The analysis of the dependence of R₀A product on temperature and the carrier concentration of light absorption layer show that, In_0.6Ga_0.4As, In_0.7Ga_0.3As and In_0.8Ga_0.2As detectors could exhibit excellent performance at thermoelectric cooling temperatures and R₀A could...