Study On The AlGaInP Led Wafers Grown By Planetary Mocvd Reactor

The process investigated in this thesis is that improve the excellent-uniformity LED epi wafers by changing the group flow rates,and provides the spport of theoretically and experimentally for growth high-quality LED epi.To lay the foundation for rapid development of LED.This thesis investigates the effects of different group V flow ratios and flow rates, AsH3flow rates and total group III flow rates on the Al compositions, growth rates, crystal qualities, doping concentrations and uniformities of epi layers grown by AIXTRON2800G4Planetary MOCVD reactor.The process of producing high quality AlGaInP red LED epi wafers is researched and has been experimentally investigated. By utilizing the optimal process, the growth rate of AlGaInP red LED epi wafers is increased by20%. The wavelength uniformity of DBR and MQW is increased by15%and17%respectively. The light intensity uniformity is increased by10%, product yield has been improved too. Therefore, the process investigated in this thesis for the LED industry has played a powerful role in promoting.