Lp-by Mocvd Preparation For Algainp Of Hb-led Wafer Testing And Analysis

AlGalnP high brightness light emitting diode (HB-LED) is a new kind of semiconductor light source which came out in the 1990's with superiority in small volume,high brightness,long life and high efficiency.For the moment,the development of LED have made a great breakthrough and the brightness is being improved ceaselessly.HB-LED have extensive prospect in communication, traffic and information displaying. In particularly, LED is a kind of ideal lighting source and it will be used in illumination step by step.In this thesis,in order to improve the design of LED structure and the quality of material, the epitaxial layer of AlGalnP HB-LED hase been inspected and analyzed by experiment research.The main work is showed as follow:(1) AlGalnP HB-LEDs with double heterojunction structure are fabricated by low pressure metal organic chemical vapor deposition(LP-MOCVD) technology.The reasonable structure designs decrease optical,electronical and thermal loses.The ways to increase LED's external efficiency are pointed out.(2) The thesis summarizes the applications of photoluminescence and electic C-V measurements. Some useful data for material growth and structure design can be obtained by analyzing, which will benefit the quality of LEDs greatly.(3) We have addressed the essential physical meaning of kinematics and dynamites ,and offered derivation of the kernel parts on epitaxial layer 1. Besides we have also pointed out the limitations in applying rocking curves to material analysis.(4) The concepts of reciprocal lattice point and reciprocal space mapping are explained, and the extending direction and reason of reciprocal space mapping are elaborated. Through analysising on the reciprocal space mapping of AlGaInP/GaAs Epitaxial Layer,the deforming informations and strains of the lattice and composition of the AlGalnP/GaAs Epitaxial Layer were obtained.This helps to optimize the MOCVD gowth procedure of AlGalnP/GaAs Epitaxial Layer.