The Study Of Testing Method And Performance Of Pulsed Ⅰ-Ⅴ In The Micro-nano Field Effect Transistor

With the development of the microelectronics industry, the integration level of integratedcircuit is improving and the feature sizes of field effect transistor (FET) are shrinkingcontinuously, which resulting in problems of device stability and reliability are becomingmore and more complex. Furthermore, these problems have seriously affected on the futuredevelopment of the field effect transistor. In order to solve the device leakage current problemthat is caused by the thickness of insulation medium decreasing continuously，the researchersbegan to use the high dielectric constant material to replace the traditional SiO2gateinsulating materials. To some extent, this way has solved the urgent needs. But the highdensity of defect existing in high-k material will bring the trap capture effect.Then leading tothe problems of threshold voltage shift and carrier mobility declining and other issues, whichis bound to mask the intrinsic characteristics of the devices. However, the traditional DC testis unable to avoid the trap capture effect in the test of device performance. Besides, thedevices have been in the conduction state under the conventional DC test, which willinevitably lead to the self-heating effects. Thanks to the property of fast texting speed,effectively avoiding the trap capture and the self-heating effects produced by long-term test,revealing the intrinsic characteristics of the devices, pulsed test has important meanings forunderstanding the mechanism of above phenomenon and optimizing the devices.Firstly this paper introduced the field effect transistor and the pulsed test. Using the4200-SCS pulse module tested the direct current characteristic curve of different types ofstandard commercial devices for pulsed test and traditional DC test. By comparing thechanges of device performance parameters in the two tests demonstrated the advantages ofpulsed test. The explanation had been presented at the same time. Then this work realized thepulsed test of the commercial device on the Cascade M-150probe station. The differences ofthe pulsed test results of the commercial devices under the test fixture and the probe stationshown the noise of probe station was bigger. Finally, this paper described the thresholdvoltage drift phenomenon of micro-nano field effect transistor through the traditional DC testand tried to make the pulsed test for the micro-nano devices on probe station. Combined withmeasurement specification parameters of the equipment gave us an analysis for results of thepulsed test. To obtain a more accurate pulse test results, we need to connect pulsed test systemand probe reasonably and make a reasonable trade-off between noise and the testing speed forlow current test simultaneously.