Investingation On Monolithic Integrated Photo-receiver Front-end Based On4H-SiC MSM/MESFET

In recent years, with the rapid development of the ultraviolet detection, the materialof SiC which based on its particular superiority takes a huge advantage in theapplication of photo-communication. Therefore, it is of great significance in designingthe optical receiver module with the SiC material. However, whether it is an opticaldevice or SiC-based devices, there is no mature circuit model for circuit design, so weneed to develop an equivalent circuit model with pure electrical element before usingthe microelectronics circuit method.In this paper, based on the small-signal model and large-signal model of4H-SiCMESFET devices, the parameters of the model are extracted with the help of the resultsobtained by sofeware of ISE-TCAD. The equivalent circuit model which embedded inPSpice is established. Compared to the results obtained by simulation, a high degree ofmatching is obtained which verifies the correctness of the model. The circuit models areestablished by using the subcircuits description provided by PSPICE.The transfer curveand the output curve are simulated. The simulation results conform well with theexperimental measurement results given in other papers.The circuit of optical receiver front-end which consists of optical detector andpreamplifier is desgined in PSpice.The optical detector is designed with the4H-SiCMSM structure and the preamplifier with the4H-SiC MESFET devise is designed intwo different structures.The amplitude-frequency characteristics,the transientcharacteristics and the equivalent input noise is simulated by PSpice.The gain of33.3dBΩ and the-3dB bandwidth of6.87GHz is obtained by the improved circuit,whichcan apply in the UV communication system.