The Study On The Preparation Techenique And Characterication Of Epitaxial Graphene Grown On SiC

Graphene have attracted considerable attention due to their novel property.Among various methods to fabricate graphene, epitaxial graphene on SiC substrate isconsidered as the most promising approach, because it need not transfer from substrateand compatible with traditional Si IC process. This paper explore the processconditions to prepare graphene on SiC sunstrate by experiments, at the same time wedo the characterization to analyze its surface morphology and number of layers. At lastwo got large graphene with high quality.First of all, this paper elaborate the unique lattice and the electronic structure ofgraphene, and introduce its excellent performance and application.Summarizes themethods of preparing graphene and their advantages and disadvantages. In addition,introduces Raman spectroscopy which was used as the main characterization methodsin this paper.Then, based on Vacuum tubes furnace at lanzhou chemical physics researchinstitute, explores the process conditions to pyrolysis SiC substrate to make epitaxialgraphene at small closed space and high temperature. Refer to the result, optimize theprocess and get the optimal process parameters to prepare graphene on differentsubstrates.Eventually grow three inches of high-quality graphene.Finally,based on tube furnace explores the process conditions to make grapheneby chlorination. We devide it into two steps, first is chlorination process performed inCl2atmosphere, to get amorphous carbon film on SiC substrate surface; then getgraphene by annealing. We found that Cu promates recombinant of amorphous carbonfilm, contributes to the quality of graphene.