Study On Diffusion Technology Of Monocrystalline Silicon Solar Cells

With the improvement of science and technology, people payed more and more attention to the renewable energy, especially the development and utilization of solar energy. Monocrystalline silicon solar cells have been extensively used in industry for the high conversion efficiency and lifetime. Many research institutions and companies are trying to improve the efficiency of solar cells and to reduce the cost. In this paper, firstly the basic principle and electronic characterization are introduced; secondly, the processes of formation of solar cells were summarized including etching, doping diffusion, plasma etching, deposition of antireflection coating and electrode formation; finally the the optimization of process of doping diffusion of solar cell which form the P-N junction was researched. In our work, I focus on the doping diffusion of both sides of wafers, the annealing of the diffused wafers and the sheet resistance of solar cells.Compared with the solar cells with phosphorus diffusion on one side of the surfaces of these cells, the solar cells with two sides phosphorus diffusion have the better open circuit voltage (Uoc), short circuit current (Isc) and conversion efficiency than that of the cells with one side phosphorous diffusion.With the annealing time of the diffusion process increased in the appropriate range of the temperature, the open circuit voltage, short circuit current and conversion efficiency were increased of crystalline silicon solar cells, and the gettering property was improved.As the sheet resistance of the monocrystalline silicon solar cells was in the range of60-85Ω2/n, the he open circuit voltage, short circuit current and conversion efficiency were increased. The gettering property of the solar cells in the range of60-85Ω/is better than the solar cells with higher sheet resistance.