Damage Effects In Silicon Solar Cells Under Proton, Electron And The Combined Irradiations

This article uses monocrystalline silicon single-junction solar cells, combineduse of space environment simulation equipment, expand research on the actualenvironment of space radiation effects in low-energy charged particles. Spaceirradiation conditions mainly related to energy is less than the proton and electronradiation200keV,1MeV electron radiation and low-energy protons electroniccombined irradiation. Use IV performance testing, the quantum efficiency of the test,the minority carrier parametric tests, analysis of two-dimensional reciprocal spacedown test and numerical simulation conducted to explore the evolution of thedamage and injury mechanism analysis.The results show that the energy of50keV,100keV and170keV low energyproton irradiation of silicon solar cells is mainly caused by a significant decline inopen-circuit voltage and short circuit current of a small decline, leading to asubstantial decline in the maximum power. Test results show that: the front surfaceof the proton irradiation, and the PN junction between the emitter region to producea large number of defects, the formation of recombination centers, improved indirectrecombination rate; reduces the penetration of solar absorption efficiency shortwavespectral weak, resulting in a small decline in short-wave part of the quantumefficiency; due to the presence of a large number of recombination centers resultedin the reverse saturation current increases, causing an open circuit voltage drop;simultaneously lead to minority carrier lifetime, reducing the minority carrierdiffusion length, the front surface recombination rate increases.Energy of50keV,100keV and170keV low-energy electron irradiation ofsilicon solar cells is mainly caused by the short circuit current and open circuitvoltage drop small decline, resulting in maximum power generated bad drop. Testresults show that: electron irradiation through the front surface of the emitter regionand the PN junction into the base region; For monocrystalline silicon solar cells playa role in the overall structure, resulting in a trap defects, resulting in a smallquantum efficiency of the overall magnitude of decay; minority carrier lifetime,minority carrier diffusion length decreased slightly, before a slight increase in thesurface recombination rate.1MeV energy of high-energy electron irradiation of silicon solar cells is mainlycaused by a significant decrease in the open circuit voltage and short circuit current,maximum power also led to a sharp decline. Test results show that:1MeV electronirradiation through the front surface of the emitter region, PN junction and the baseregion, the role of all structures in silicon solar cells; particle irradiation produces a large number of defects in the base area, reducing the solar cell to wear Throughstrong ability to absorb long-wave spectral efficiency, resulting in long-wavelengthquantum efficiency monocrystalline silicon solar cells part apparent attenuation;minority carrier lifetime, minority carrier diffusion length was significantly lower,front surface recombination rate is significantly increased.Proton irradiation before electronic integrated, single-crystal silicon solar cellopen circuit voltage and short circuit current is attenuated, resulting in maximumpower production decline. Quantum efficiency of short wavelength part of theminority carrier diffusion length of the minority carrier lifetime, and a certaindegree of decline, the front surface recombination rate increases. Irradiationconditions change over the joint of each parameter is greater than the magnitude ofthe parameters change the order of magnitude under irradiation conditions, andchanges in the parameters after the first e-magnitude slightly larger than the firstproton-proton condition after the electronic condition.