Proliferation Of Monocrystalline Silicon Solar Cell Technology And Suede Prepared

People have gradually enhanced consciousness of energy crisis, the demand and research for new energy have gradually increased. Silicon solar cells standing for new energy, has researched and developed more half a century, recently, reducing cost and advancing efficiency have been the direction of research silicon solar cells, preparing texture on silicon surface is a way of advancing efficiency. Preparing p-n junction of solar cells is the most key process in solar cells production and is researched abroadly.this paper researched texture preparation of monocrystalline silicon solar cells and preparation p-n junction of solar cells.Firstly, the basic status of solar cells is summarized; secondly, the basic principle of solar cells is introduced; thirdly, the experiment is done including that texture preparation of solar cells and preparation p-n junction. At last, the test result of preparation texture and preparation p-n junction is analyzed.In the processing of texture preparation of monocrystalline silicon solar cells, by corrosive sodium hydroxide solution adding additive (sodium silicate, sodium carbonate, Isopropyl alcohol, alcohol), we discovery that there is laws between additive concentration and silicon's reflectivity and reaction rate after etching, which is analysed it and get the best experiment conditions. In orthogonal test of sodium hydroxide-sodium silicate-isopropyl alcohol system, the most influence on reflectivity is sodium hydroxide concentration and ecthing temperature, followed by sodium silicate concentration and time, the least is isopropyl alcohol concentration, and get the best reation conditions:sodium hydroxide concentration 1%, reaction temperature 860C, sodium silicate concentration 0%, isopropyl alcohol concentration 12%, etching time 40min.In the test of preparation p-n junction, preparation p-n junction by phosphorus oxychloride diffusion, it is researched that constant nitrogen-variety oxygen, specific flux of nitrogen and oxygen flow, variety time, variety temperature, gas total flow affect square resisitance, which is analyzed. Preparation p-n junction by phosphorus pentoxide sublimation, the most influence on square resistance is reaction time followed by flow and silicon reaction temperature, the least is phosphorus oxychloride diffusion. In the uniformity comparison of preparation p-n junction by phosphorus oxychloride diffusion and by phosphorus pentoxide sublimation, it is more uniformity that p-n junction preparation by phosphorus pentoxide sublimation.