Study Of Mem-element Model Based On Memristor

Mem-elements include memristor(MR), memcapacitor(MC) and meminductor(ML), related concepts extend the classical circuit theory. Because of their uniquememory effect, mem-elements have wide application prospects.However, limited byworkmanship, mem-elements are not available in market. Research of them mainlydepends on CAD software. Therefore, the simulation models become the cornerstonefor further study.This paper comprehensively discusses the conditions of linear transformationbetween different mem-elements. Based on these conditions, MR-MC, MR-ML, MC-ML,MC-MR transformation circuits and corresponding models have been constructed.Results of Pspice simulation indicate that: mem-elements show pinched hysteresis loopsand hysteresis collapses with increasing frequency of the source. These results verifythe correctness of the proposed mem-element models. In addition, In order to applythese models to actual circuits.This paper also introduces how to control the value ofeach mem-element model by using a memrsistance control circuit, a series ofexperiments tells that their value can vary in a large range.Furthermore,this paper discusses the conditions based on a nonlinear trans-formation between different mem-elements. And corresponding circuit models arepresented, then results of Pspice simulation indicate that: the memory device obtainedfrom the nonlinear transformation show pinched hysteresis loops,too.And moreovertheir loops shift. Results of Pspice not only prove the correctness of the models，but alsofound that the external signal can control the value of MC and ML. This is of greatsignificance.