The Memristor Dopant Linear Drift Model Improvment And Memristor Based Quantization Circuit Design

As the fourth fundamental circuit element, memristor will introduce great change to the conventional electronic circuits. Memristor model study is the foundation of application study. Quantization circuit of ADC(Analog to Digital Converter) is one of the promising circuits applications that can be improved by memristors.In this paper, the dopant linear drift model of memristor is optimized. The effects of oxygen vacancy amount and cross sectional area are taken into account in the proposed model. The optimized model is simulated with SPICE model. The simulation proves that the model improvement is in accordance with theoretical analysis of memristor.A parallel memristors quantization circuit design is proposed. The implementation scheme with parallel memristors, quantization process and reading strategy was described. This circuit is able to achieve high rate and high precision quantization conversion. It is better than the Y.V. memristor quantization circuit in conversion rate, power dissipation and circuit size. The feasibility of the proposed quantization circuit implementation is proved by simulated results.