Study On Irradiation Performance Of Electronic Components Used In Space Exploration

Radiation effect is one of the main causes of payload electronic systems and equipment failure on spacecraft in recent years. Single event latch-up(SEL) may pull down the power system bus, and even destroy the satellite power. Single event upset(SEU) can cause data errors. Total ionizing dose effect,TID)will lead to poor performance even failure of the device. How to get the above irradiation performance of electronic components, designe protective measures and verify the effectiveness of the measures has become a problem worthy of study. In this paper, I conducted the following studies on AD7476 and DS18S20 Z that will be used in a great amount in the electronics readout system of dark matter particles satellite silicon array detector.(1) According to the operating conditions of dark matter particles satellite silicon array detector electronic sreadout system, I designed a set of electronic components radiation properties exploration system. I completed the circuit schematic, PCB design and hardware circuit debugging.(2) I designed the FPGA program and PC program based on Labwindows /CVI.(3) I explored the energy threshold and latch-up current in SEL and the situation in SEU of AD7476 and DS18S20 Z by heavy ion accelerator experiments terminal.(4) I designed the SEL protection measures and discussed the SEU data processing measures.(5) I verified the effectiveness of the SEL measures first by laser pulse experiments and validated SEL measures again by heavy ion accelerator experiments terminal experiments.(6) I researched the effect of the TID by cobalt 60 radiation on AD7476 and DS18S20 Z, and assessed the impact of the TID.Experimental results show that, LET latch-up threshold is 14 Me V * cm2 / mg and current increment is over 30 m A when AD7476 is latch-up. 20 m A was slected as power off current increment threshold.The protection measurement ’power off for one second, then power on’ is very effective for AD7476. The LET latch-up threshold is 15 Me V * cm2 / mg, and the current increase in 15-30 m A for DS18S20.The measures‘100 ohm current limiting resistor added in LDO ’ are very effective.I discussed DS18S20 Z SEU approach. First internal registers CRC checksum, second removing burrs and single-point jump when the track temperature data are drawn curve on the ground, thirdly acquisiting multiple acquisitions for each temperature then eliminating the maximum and minimum. This three methods can get rid of the SEU data.TID experimental evaluation shows that the performance of the two chips can withstand a total dose of three years in orbit.