Wideband Equivalent Circuit Model Of IGBT Based On PSPICE

As the core equipment of flexible DC converter system, IGBT combines theproduction technology of high-voltage, large-current thyristor and micro processtechnology of the integrated circuit, which has excellent comprehensive performance.Based on the N channel MOSFET as input and PNP transistor as output electrode, it isone-way darlington tube which sets the advantage of power MOSFET and bipolartransistor BJT in one. It has high-speed switching, low driving-power and low-switchingloss, etc.The high frequency interference produced by the fast switching actions of IGBTvalve is far bigger than interference of the traditional DC converter valve, which is up totens of megahertz. This high-amplitude, rapid-change kind of voltage and current are themain sources of electromagnetic interference in the environment.The structure,working principle, the static and dynamic characteristics of IGBT wasintroduced in this paper, and the focus was take on the functions, the characteristics ofPSPICE software and the PSPICE models of several components. Based on theequivalent circuit of IGBT, the IGBT wideband equivalent circuit model was establishedby combining with the composite model and the sensitivity of parameters. Thecharacteristics simulation and the data analysis of the steady, dynamic model of IGBTwas made using PSPICE software.At the same time the characteristic curve of simulationwere compared with the curve provided by the manufacturer, and the error was calculated.It is concluded that the IGBT wideband equivalent circuit model builded in this paper ismore accurate and effective. Based on the IGBT dynamic model, the EMD spectrum wasanalyzed using IGBT switching transient simulation waveform, and electromagneticdisturbance of the actual IGBT device of TO360NB25A was tested. Finally, the powerloss during switching was calculated using simulation waveform generated in the IGBTswitching process, the flow chart during calculation of the energy loss was obtained. Theeffectiveness of the IGBT model builded in this paper was once again proved throughcomparing the calculation results and the actual data of the TO360NB25A IGBT.