| In recent years, reseacrh on chcmical vapor deposition (CVD) growth ofgraphenedevelops quickly for it can produce large area and high quality graphenefilms on catalyst metal such as Ni or Cu. However, using CVD grown graphene tofabricatea device needs a series of complicated porcess, which includes etchingcatalyst metals and transferring onto dielectric substrates. Thus, direct growth ofgraphene on dielectric substrates could largely simplify the fabrication ofgraphene-based devices.Chapter1presents a brief review of properties of graphene and a summary ofCVD grown graphene films on dielectric substrates in recent years.Our main goalsand contents of research in this paper arc also included.Chapter2mainly shows several characteristic tools of graphene such as RamanSpectrum, Scanning Electron Microscopc (SEM), Transmission Electron Microscope(TEM), Atomic Force Microscope (AFM), Four-point Probe andlJV-VIS-NIRSpectrophotometer (NKD-8000).Chapter3demonstrates using oxygen plasma-etching technique for efficientgrowth of graphene iflms on quartz.The growth processes were optimized byoperating etching duration, growth temperature, gas flows and growth time. Growthmechanism is also investigated through XPS and Raman spectroscopy. It is found thatquartz substrates would become rough and the oxygen content would also increaseafter oxygen plasma etching. Both the rough surface and oxygen composition couldhelp the growth of graphene films. The resulting graphene films prepared on theoxygen plasma-etched quartz exhibited a high optical transmittance of95,3%coupledwith a sheet resistance of?4.6kohm sq"1.Chapter4mainly discusses the chemical sensitivity of the as-grown graphenefilms. NO2gas pre-mixed with air served as the analytes. Theresulting graphene films had a high sensitivity to NO： at low parts-pcr-milliun level in air at room temperaturewhich is superior to metal-catalyzed graphene.The last chapter summarizes the main topics of this article, and prospects thefuture research of graphene. |
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