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The Research On The Gas Phase Process Of Electron-Assisted Chemical Vapor Deposition From CH4/H2 Mixture Gas

Posted on:2003-03-31Degree:MasterType:Thesis
Country:ChinaCandidate:B Q MaFull Text:PDF
GTID:2120360122961071Subject:Optics
Abstract/Summary:PDF Full Text Request
In this paper, the gas phase dissociation process during the diamond film growth from electron-assisted chemical vapor deposition (EACVD) by considering CH4/H2 mixture gas as source gas had been studied by using Monte-Carlo computer simulation method. The EACVD gas phase dynamics model was built firstly and the low temperature deposition process was also discussed. The main simulation results were as follow: the average energy of electron decreases with the increasing pressure; it decreases with the increasing methane concentration in the filling gas in the lower pressure range and increases in the higher pressure range; the number density of fragment H and CH3 does not always increases with the gas pressure, but reaches an individual maximum; energy carried by neutral dissociative fragment CH3 decreases with increasing gas pressure and CH4 concentration. The obtained results play an important role in the optimal parameters selection during the EACVD diamond film experiment and high quality diamond deposition at low temperature. And they have important reference for the quantitative research on the effect of various experimental conditions on diamond film deposition from EACVD technique.
Keywords/Search Tags:Chemical vapor deposition, Monte-Carlo simulation, Low temperature deposition, CH4 concentration
PDF Full Text Request
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