TSV Power Model And Power Consumption Analysis

With the rapid development of the integrated circuit in accordance with Moore’sLaw, we need to find a new technology of interconnect in designing the circuit.3D ICTSV(Through Silicon Via) has got more and more attention.3D IC provides a newmethod for improving integration of IC, the TSV(Through Silicon Via) technologyplays a very important role in the3D integrated circuit as a new interconnect technology.The power of interconnect is very important to the interconnect design and cannot beignored. The effect of TSV’s technology to its power consumption becomes anindispensable in the research of TSV.The purpose of this paper is to study the effect of single and double TSVs’technology to its power consumption. Before the studying of single TSV’s powerconsumption, the power model is established, the equivalent circuit is determined andthe component values of the equivalent circuit are calculated. Then studying the effectof technology to the equivalent circuit elements, we can calculate the powerconsumption by the formula and get the effect of technology to its power.For two TSVs, there are three models, such as the П model, the T model and thetransmission model. We study the transmission model in this paper. We can obtain theparameter values by using the software of HFSS. Then we can get the value of the TSVs’power consumption and the effect of technology to its power.