Experiment Study Of Epitaxial Growth Of High Luminous Efficiency GaN-based LED

Light emitting diode (LED) is replacing the traditional illumination source, because of theiradvantages, such as long lifetime, low energy consumption, high light efficiency, etc. It can besaid that the key to the LED lamps to replace incandescent and fluorescent lamps is thelight-emitting efficiency and cost. Enhance of epitaxial technology is the key to increasing thelight-emitting efficiency and decreasing cost of LED lighting applications,which promotehigh luminous efficiency of LED epitaxial research. We make an explorative researchon new structures of the high light efficiency LED epitaxial using several mainstream man-ufacture techniques of LED epitaxial.Adjusting components, thickness, structure etc.of MQW where electron and holerecombination generate photons is the most direct and effective mean to improve the LEDluminous efficiency.In order to improve luminous efficiency of GaN-based LED, we adjustthe content of Ga in barriers and the content of In in wells.The result showes that theluminous efficiency can be increased by3.3%and5.1%compared with the existing processof LED.Due to the low hole concentration and heavy hole effective mass,hole-injection efficiencyinto the active region of GaN-based LEDs is known to be much poor.Based on the existingprocess of LED structure，a low temperature hole injection layer (LT-HIL) is designed inGaN-based light emitting diodes (LEDs) between multiple quantum wells and p-AlGaNelectron blocking layer (EBL). The result shows that the luminous efficiency of LT-HIL-LEDcan be increased by13.8%and the forward voltage is more lower than traditional LED.Whenthe flow of Cp2Mg is400sccm, the crystal morphology of LT-HIL-LED is normal.