Research And Design Of Radiation Hardening SOI CMOS Devices Structure

In recent years, the rapid development of space technology lead more and more electronicdevices to be applied in space equipment and radiation environment, the Radiation Effects of thespace will brings a great deal of harm to the electronic devices. Although SOI MOSFET deviceshave high resistance against Single Event Effects, its complex structure make it against TotalIonizing Dose Effects to be more complicated than traditional bulk silicon devices. Based on thesystemic investigation of the research status concerning SOI MOSFET devices against TotalIonizing Dose Effects at home and abroad, this thesis study the Total Ionizing Dose Effects ofH-shaped gate and annular gate SOI MOSFET devices, and simulate Total Ionizing Dose Effects ofthe linear gate, H-shaped gate and annular gateSOI MOSFET devices.Based on the research and analysis of basic principles of Total Ionizing Dose as well as itsinfluence on SOI MOSFET devices, radiation hardening theory of H-shaped gate and annular gateSOI MOSFET devices and TCAD simulation. This thesis has done mainly the following work:First, through the anaysis of the mechanism of CMOS devices Total Ionizing Dose Effects andthe exist radiation hardening device structure, study the electrical properties degradation mechanismof CMOS devices, such as threshold voltage drift, leakage current, etal. Lay the foundation forproposing the SOI MOSFET devices which has resist capacity against Total Ionizing Dose Effects;Second, this thesis analyse and design the H-shaped gate, square and circle annular gate SOIMOSFET devices structure, and they are capable of resisting Total Ionizing Dose Effects, andlongitudinal structure and transverse dimensions of the three kinds of devices structure are designed.Based on the typical0.8mprocess technology, this thesis optimum and design H-shaped gateSOI MOSFET devices which effective W/L is respectively2m/0.8m,4m/0.8mand6m/0.8m, and square, circular annular gate SOI MOSFET devices.Third, for three kinds of devices structure SOI MOSFET resisting radiation (H-shaped gate,square and circle annular gate SOI MOSFET devices structure) which are optimized and designed,assess the capable of resisting radiation of SOI MOSFET devices using Sentaurus TCAD to be3Dsimulation. On the Sentaurus TCAD environment, traditional gate, H-shaped gate which effectiveW/L is2m/0.8m,4m/0.8mand6m/0.8mand square, circular annular gate SOIMOSFET devices are fabricated, and simulate and analyse electrical characteristics of three kinds ofdevices structure before and after Total Ionizing Dose Effects. Based on the analysis of thesimulation data, compare and summarize the changing relationship between electrical characteristiccs of linear gate, three kinds of different effective W/LH-shaped gate and square,circular annular gate SOI MOSFET devices. From the this, we can see that H-shaped gate andannular gate SOI MOSFET devices are capable of better resisting Total Ionizing Dose Effects, andH-shaped gate device structure are better than annular gate; When the radiation dosage is400Krad(SiO2), H-shaped gate device structure which effective W/Lis4m/0.8mhave thebest capacity to depress drifting of threshold voltage, H-shaped gate device structure whicheffective W/L is6m/0.8mhave the best capacity to depress leakage current. Therefore, thisprovide a reliably reference for thefurture design of new radiation hardening SOI MOSFET devicesstructure.