| GaSb has a low band gap (0.72eV),so it has higher response to infrared light, it can be used for fabricating the infrared photodiode, especially in recent years,with the development of thermophotovoltaic (TPV) technology, GaSb become one of the most promising materials of TPV cells. One of the most important part of the TPV system is the infrared cells, while the key of TPV cells is the preparation for PN junction with high performance. Usually, the most simple method of preparation for GaSb PN is the diffusion of Zn in N-GaSb substrate, so that we can get P-GaSb on N-GaSb substrate, then GaSb PN junction can be formed.Usually,many researchers fabricate GaSb P-N junctions by vapor zinc diffusion process, but the vapor Zn diffusion have some shortcomings,like spending a lot of time, large gas consumption and so on. In order to overcome these shortcomings, we proposed that solid-phase Zn diffuse on N-GaSb substrate surface, we designed the experiment and successfully fabricated GaSb PN junction with about200nm junction depth and1018cm-3hole concentration,which laid the foundation for the fabricating GaSb photovoltaic devices. |
