ZnO Single Crystal Growth And Research Of Optical And Electrical Properties

Zinc oxide?ZnO?has historically been a hot research object in the third generation of semiconductors.It belongs to the II-VI family of direct band gap wide band gap semiconductors and has great application prospects in modern optoelectronic functional devices.The single crystal growth method is hydrothermal growth method and flux method.Mineralizer or flux must be added during the growth process.This will produce a grown ZnO single crystal containing a certain amount of non-arbitrarily doped elements,such as:Li⁺,Na⁺etc.ZnO single crystals with higher purity and crystallization quality can be achieved by using the chemical vapor transport method.This article intends to obtain the expected ZnO single crystal by means of chemical vapor transport method using homoepitaxy and heterogeneous methods to reveal the predetermined rules of its structure and photoelectric performance.The main content is divided into two parts:1.ZnO single crystal homoeopathic;the experiment uses a newly designed synthetic chemical vapor transport external system of quartz ampoule,hydrothermally synthesized ZnO?0002?substrate as the crystal growth seed,and homoepitaxially grown ZnO single crystal.Test and analyze its structure and photoelectric performance.SIMS analysis and ICP analysis showed that the content of ZnO single crystal impurities by hydrothermal synthesis,the content of homoeopathic ZnO single crystal impurities decreased,and the partial density decreased by an order of magnitude.The presence of oxygen vacancies in the crystal can be removed in a continuous manner;through residual stress analysis,the compressive stress gradually decreases during the growth process,indicating that the homoeopathic growth method is suitable for growing large-size,low-stress ZnO single crystals.Through fluorescence spectrum test analysis,homoeopathic ZnO single crystal has a distorted fluorescence response around 400⁶50 nm;analysis by Hall effect test shows that the indicated low oxygen vacancy ZnO single crystal has increased carrier mobility and carrier current the daughter concentration decreases.Hymenoptera ZnO single crystals can be obtained with large size,low stress,excellent crystallization quality,low impurity content,and excellent photoelectric performance.2.ZnO single crystal heterogeneous;GaN/Al₂O₃?0002?substrate was used as seed heterogeneous growth for the experiment.The GaN/Al₂O₃ substrate replaced the hydrothermally synthesized ZnO seed.This method can be in effect.Reduce preparation costs.Heterogeneous ZnO single crystal has a large number of pits in the central region compared to the edge region,and there are a large number of oxygen vacancies in the ZnO single crystal.With the increase of the growth time,the crystalline quality of the ZnO single crystal slightly increases,and the dislocation density gradually decreases.The impurity content gradually decreases;the transmittance analysis shows that the transmittance of ZnO single crystals gradually increases with increasing growth time;the Hall effect analysis shows that the carrier concentration of ZnO single crystals gradually decreases with increasing growth time,and carrier migration The rate is gradually increasing.Initially,ZnO single crystals with relatively expensive GaN/Al₂O₃ substrates can be penetrated in size,have the best crystalline quality,have the impurity content replaced,and have good photoelectric performance.