The Preparation Of Alumina Thin Film FPR Its Application In Inorganic EL Devices

Electroluminescent （EL） display has a light, high efficiency, fast response,low energy consumption and low cost advantages, with the application of mediumand large display screen. In the inorganic EL displays, the dielectric layer is toprovide electron emission of interface breakdown in light-emitting layer which canindependently take when applied voltage happens, current limited role to play, whileprotecting the light-emitting layer from moisture erosion. Choice of dielectricmaterial charge storage density need to consider the breakdown field strength, wemust also consider the stability of the barrier properties and the interface of adjacentlayers. Al₂O₃（alumina） film has excellent transparency, chemical stability, electricalinsulation, thermal resistance, mechanical strength and hardness, in optics,microelectronics, optoelectronics and mechanics has a wide range of uses.At present, the DC magnetron sputtering deposition rate is high, lowoperation cost, easy to mass industrial production, but the aluminum target surfacewill cause frequent abnormal discharge sputtering power constantly tripping overthe Netherlands to block a continuous coating.In this paper, pulsed sputtering technique to overcome the "discharge"phenomenon, so that film can be stable for a long time to obtain a more uniform,stable thickness; and by adjusting the sputtering power, pressure, oxygen content ofthe work process parameters of Al₂O₃films prepared by different, study of theseparameters on film thickness and dielectric properties, try working out a more stablesputtering process to prepare with good dielectric properties of Al₂O₃films.In this paper, impulse response sputtering thickness range of50⁵00nm ofAl₂O₃films. By analyzing the comparison and found that at lower power density,work under pressure and higher oxygen content deposited Al₂O₃film has gooddielectric properties. Also uses the staff and the electron beam evaporation of the dielectric properties of Al₂O₃thin films are compared, pulsed reactive sputtering ofAl₂O₃films leakage current density two orders of magnitude lower. And to applythe above sputtering inorganic EL device of Al₂O₃thin films in order to examine theentire device fabrication process of the stability of the process conditions to obtainthe best result: greater than320V voltage devices, brightness of1760cd m^-2.This article also through the oxide and tantalum （Ta2O5） thin films, bariumstrontium titanate （BST） thin films to contrast the situation found that Al₂O₃thinfilms more accessible, more easily controlled conditions, with obvious advantages.Through this experiment and research, using pulsed reactive magnetronsputtering out with good dielectric properties of Al₂O₃thin films can be successfullyused in the production of inorganic EL device; and also in the liquid crystal displayand semiconductor lighting technology, is of great practical value.