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The SnO2 Thin Film Prepared By RF Reactive Sputtering And The Study Of Technology

Posted on:2011-08-22Degree:MasterType:Thesis
Country:ChinaCandidate:L HaoFull Text:PDF
GTID:2178330332971444Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
SnO2 is n-type semiconductor material, it has a good adsorption and chemical stability, so that it can be deposited on glass, ceramics, oxides and substrate materials of other types. SnO2 has higher melting point and good transmission, it doesn't react with the air of oxygen and water vapor, the present study is more all-solid-state thin film lithium-ion battery anode material. With the development of nanotechnology, the use of transparent conductive thin film SnO2-based gas sensors are widely used in detection of a variety of harmful gases, combustible gases, industrial gas emissions and environmental pollution gas. In addition, SnO2 thin film is also mainly used for thin-film resistors, electric conversion thin-film, heat reflector, SIS heterojunction structure, the surface protection layer of glass and glassware.In this paper, the nano-SnO2 thin films were prepared on glass substrates with RF reactive sputtering method by the domestically produced Multi-coating systems: the purity of tin target material selected is 99.99%; the temperature of the glass substrate is 240°C. We have deposited SnO2 nanometer thin film samples under the vacuum of 0.3Pa and 200W sputtering power, argon and the oxygen in ratio of 4:1. Then samples were annealed for 60 min at 400°C. The structure of the thin film before annealing was Multi-crystalline. Crystal grain became bigger after annealing by XRD analysis using D/max-rB type X-ray diffraction. The thin film quality was improved and the structure was more compact after annealing by analyzing its superficial appearance using Nano ScopeⅢ-type atomic force microscope. Transmittance was analyzed by WGD-3 type grating spectrometer which was over above 80% before annealing in the air, and it was 90% after annealing. From using FEI scanning electron microscope for energy spectrum analysis, we found the thin film of which O element and the Sn element ratio is close 2:1. Through the above experiments, the optimum sputtering process has been got.
Keywords/Search Tags:SnO2 thin film, RF reactive sputtering, transmittance
PDF Full Text Request
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