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Wafer Ball Defects Issue Study And Solution

Posted on:2013-06-29Degree:MasterType:Thesis
Country:ChinaCandidate:L Y KongFull Text:PDF
GTID:2268330392470786Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
In modern society, the integrated circuit processing technology rapiddevelopment, the improvement of the production equipment and process environmentperfect modern lithography system brought a qualitative leap. With the shrinking sizeof integrated circuits, electrical components integration and performance continue toimprove, the graphics area is growing smaller and smaller lines requirements, theprocess level, the entire lithography manufacturing process labor participation in theprocess is illegal avoided, as well as the stability of the process equipment, processraw materials, the impact of factors there, so to eliminate and avoid various defectscaused by the production process to further improve the yield and performanceparameters, still lithography research focuses on the quality control of themanufacturing process.The entire batch of wafers scrap wafer defects caused a great impact on theproductivity and cost. The former detect defects in the etching process and redo wafercapacity can increase the value of the control defect. True defects generated by opticallithography process, we need to be specific and concrete analysis, not only to be atemporary solution to the problem, but also to identify the root causes and come upwith a reasonable and viable solution to avoid the repeated occurrence of the defect.So as to reduce the impact on the production, machine utilization. Reduce productioncosts and labor costs, increase wafer production to generate profits for the company.In this article, we on the photolithography process wafer spherical defects as anexample, described in the wafer production problems and treatment methods.Collection of data, analysis of data, to find out the characteristics of the data, analyzethe causes, simulating experiment, repeat defect generation process, find out theeffective monitoring method. For complex problems we should first find out thetemporary hemming method, will minimize the influence. The degradationexperiment to find out the root cause of the problem, only to find the root cause of theproblem we can design a complete solution.
Keywords/Search Tags:Ball defects, Lithography, Track, Speed, coating, exhaust
PDF Full Text Request
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