Font Size: a A A

Calculation On Semiconducting Properties Of A Compound Material Of Indium Iodide And Synthesis Of The Polycrystalline

Posted on:2014-06-23Degree:MasterType:Thesis
Country:ChinaCandidate:F H ChenFull Text:PDF
GTID:2268330392464580Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
With the development of the nuclear technique, semiconductor materials used fornuclear radiation detectors have a very widely prospect in various fields, such as nationaldefence and health care. Detectors that work with the chips made by Indium Iodide (InI)crystals have high energy resolution and high detective efficiency for γ-ray, due to theirwide band gap, large average atomic number, high resistivity, good carrier mobility-lifetime product. The detector made by InI crystal can be used and the data acquired can bestored in room temperature. These make InI to be one of the key new materials for roomtemperature nuclear radiation detectors.In this paper, the electronic structures and optical properties are calculated by thesoftware of Materials Studio which is based on first-principles calculations. The synthesismethod of InI polycrystalline was studied, and the chemical compositions, structures andsemiconducting properties of the polycrystalline have been investigated thoroughly.Firstly, the structures such as band gap, density of states, electron density differenceand optical properties like dielectric function, absorption, energy loss function andrefractive index of ideal InI were calculated by Materials Studio. The physical propertiesrelated to InI were obtained.Secondly, the preparation process parameters, such as the ratios of raw materials,synthsis temperature were got through the analysis of the physical and chemicalcharacteristics and the phase diagram of indium-iodide complex. InI polycrystal wassynthesized by two-zone horizontal vapor transporting method. The sample of InIpolycrystalline was sent to the Illinois Institute of Technology of the USA for polycrystalpurification and crystal growth.Finally, the microstructure, components, phase, absorption, energy gap and resistivityof the InI polycrystal were detected by the glow discharge mass spectrometry, scanningelectron microscope-energy dispersive spectroscopy, ultraviolet-visable absorption, X-ray diffraction and resistivity testing system. The properties of indium iodide were evaluatedthrough the comparison between the theoretical and experimental value of InI.
Keywords/Search Tags:room temperature, nuclear radiation detectors, semiconductor, first principles, indium iodide
PDF Full Text Request
Related items