Vanadium oxide films and its applications in Microelectronics and Opticoelectrionics have been a focus of research. At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase. Because of its excellent properties, VOx films can be applied in many fields. However, preparation technique of VOx film is not mature. The aim of our paper is preparing thermal-sensitive VOx films by means of evaporation. In this paper, we deposit VOx films by means of evaporation of V2O5 powder, and we make some experiments on the basis of related theories. By XRD and SEM technique we study the properties of VOx films prepared in different conditions, for example, the effects of different substrates, substrate temperature and thickness of films on composition,phases and morphology of VOx film; by testing electrical properties of VOx films, we find the resisitance and TCR of VOx films change observably as substrates, substrate temperature, thickness of films and test methods. In experiments, diameter of VOx film grain is 200nm and its TCR is up to 3%/℃.
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