Pcvd Method N Doped N Type Diamond Film And Characteristic Research

Intrinsic diamond have excellent insulation，but the doped diamond films canachieve a semiconductor characteristics，therefore, the doped diamond films haveextensively application in electronic area.In this paper, N-doped diamond films were fabricated by hot cathode DC chemicalvapor deposition method（DC-PCVD）with H₂、CH₄and NH₃as the precursor. Thegrowth behavior with different texture and electronic properties were characterized bySEM, XRD, Raman spectroscope and Hall.Compared with N₂and C₃H₆N₆（melamine），the bond energy of NH₃is the smallest，so C atomic is replaced by N atomic easily and can promote secondary nucleation ofdiamond and improve conductivity. NH₃（≦6sccm）can decrease grain size and reducereaction speed and stop the growth of the diamond films. When the temperature isbetween800℃and1000℃，the pressure is10KPa，the quality of the diamond films wasenhanced but reduce the conductivity of diamond.