Research On Lapping6H-sic Crystal Substrate(0001) C Suface Using Diamond Abrasive

The single crystal of silicon carbide has good thermal properties, electrical properties, abrasion resistance and high hardness. It is widely used in weight in various fields of semiconductor lighting, aerospace, signal transmission, radar, very broad prospects for development. Whether it is as a semiconductor substrate, or the production of integrated circuit materials, both on its surface machining accuracy and completeness of the very strict requirements, the traditional processing methods there is serious damage of the substrate surface, low efficiency, high cost of many shortcomings, unable to meet global planarization processing goals.For the silicon carbide substrate processing problems, this paper presents the soft abrasive grinding processing method of the silicon carbide substrate. For the characteristics of the silicon carbide substrate materials, we use the orthogonal experiment, the single factor experiments and range analysis, ground testing of the SiC single-chip. First to optimize the grinding paste ingredients, design a particle size platen speed, loading disk speed, grinding pressure on the material removal rate and surface roughness effects of single factor experiments, the final analysis the principle of removal of abrasive paste, in-depth the movement mechanism of abrasive grinding processing. The experimental results show that:soft abrasive grinding wheel, grinding silicon carbide substrate can be ultra-smooth surface of the low-damage processing abrasive paste the optimal formula for the research assistants agent8%,28%of the dispersant, thickening material20%, the lubricating material18%, abrasive6%, reconcile the agent20%. Polishing pressure and abrasive particle size have great affect on material removal. Grinding plate speed is important than the speed of the loading plate on removal rate. The correctness of the experimental is the result by the grinding mechanism. Colleagues continue to study the ultra-precision machining of SiC-based film to provide reference data.