Study On The Technique Of Electrical Enhanced Photocatalysis Polishing Of Silicon Carbide Wafer

As a third-generation semiconductor material,single-crystal silicon carbide has good technique characteristics such as high thermal conductivity,high bonding energy and wide band gap.It has important applications in the field of aerospace and intelligence,which puts forward high requirements for the polishing and precision machining of the silicon carbide wafer.However,single-crystal silicon carbide is mainly a compound with covalent bonds,and covalent bonds account for about 88%,which makes it high in hardness and chemically inert.Aiming at silicon carbide high hardness and brittleness,a global planarization technique method: electrical enhanced photocatalysis polishing of silicon carbide was proposed through the investigation and analysis of the development status of silicon carbide polishing technology at home and abroad,then the certain experiments were made.(1)Research on precision dicing technique of silicon carbide wafers was made.The silicon carbide wafer was diced with an ultra-thin diamond dicing blade on the DS610 dicing machine.The radial wear of the dicing blade,the maximum current of the spindle,the surface morphology,the number of chippings longer than 10?m,and the chipping area are used to explore the impact of dicing technique parameters such as spindle speed,feed speed and cutting depth to obtain optimal silicon carbide dicing parameters and analyze the reasons that affects the dicing result.(2)It was proposed the electrical enhanced photocatalysis polishing technology and theoretical research was made.The composition of the polishing liquid in the electrical enhanced photocatalysis polishing was analyzed.The COMSOL Multiphysics software was used to simulate the study of electric field distribution and a test platform was built.(3)Research on the technique of electrical enhanced photocatalysis polishing of silicon carbide wafers was made.Through systematic orthogonal experiment and single factor experiment,the surface roughness and material removal rate are used to explore the effect of the technique parameters of electrical enhanced photocatalysis polishing: polishing pressure,polishing disk speed and voltage on the polishing of silicon carbide wafers.The reasonable electrical enhanced photocatalysis polishing technique parameters of silicon carbide wafers was obtained and the material removal technique of electrical enhanced photocatalysis polishing of silicon carbide wafers was summarized.