Dersign Of The X‐band Oscillator

In order to adapt to the rapid development of society, people have a higherrequirements for wireless communications and would like to apply it to wider areas. Askey components in wireless communications, oscillator has a great impact oncommunication equipment; we hope that the oscillator has characteristics of higheroutput power, higher frequency, lower phase noise, higher stability, smaller size, higherreliability and lower cost. It is very important to complete the oscillator design whichmeets performance parameters through reasonable means.The design of oscillator circuit is based on the theory of hybrid microwave integratedcircuits(HMIC) in this paper, active and passive devices and the resonant circuit isintegrated into the same plane circuit above. It is very important for the frequencysource to design high-Q resonant circuit in order to improve the frequency stability andphase noise performance of the oscillator circuit, dielectric resonator and SIW cavityresonators has characteristics of high Q value and ease of integration with planar circuit,theoretical analysis, modeling and simulation of the two high-Q resonator is theinnovation of this paper. In particular, it is relatively difficult to the simulation design ofvarious structures SIW cavity. At last, cavity is applied to the design of the X-bandoscillator, it is proved to have a good feasibility and prospects of such a cavity oscillatorcircuit design.The main work of this paper, firstly, the paper describes the development of theoscillator and the basic concept of the DRO and SIW oscillator; secondly, the paperanalyzes the mechanism and design specifications of the oscillator and the basicconcepts and theories of the resonant circuit; then the design work of the DRO and SIWoscillator was completed, Including choice of design specifications and design options,theoretical analysis, modeling and simulation of the resonant circuit, modeling,simulation, processing and testing of oscillator circuit; and finally summary and outlookof the paper.This design hopes to get10GHz,10.5GHz,9.3GHz three oscillation frequency usingDRO, series and parallel SIW oscillator design, Requirements for output power greater than5dBm, second harmonic rejection is less than-20dBc and phase noise is less than-80dBc/Hz@100kHz. Finally, DRO achieve the oscillation frequency of10.27GHz andachieve the power output of6.9dBm, the frequency error is3%; series SIW oscillatorachieve the oscillation frequency of10.36GHz and achieve the power output of8.7dBm, the frequency error is1%; parallel SIW oscillator achieve the oscillationfrequency of7.3GHz and achieve the power output of8.1dBm, the frequency error islarge. Frequency stability and accuracy of DR, the strength of coupling circuit, theprocessing error of cavity and the accuracy of the simulation software is the reason ofthe frequency offset. in addition, Phase noise, second harmonic rejection and otherrequirements meet the design requirements.