Research And Design Of10A/100V VDMOS

Power VDMOSFET(Vertical Diffuse Metal Oxide Semiconductor Field EffectTransistor), referred to VDMOS. It is a MOS structure transistor of vertical conductiveand double diffusion form, majority carrier is its conductive charge carriers, it is avoltage control switch power device. The main feature VDMOS has: high inputresistance, not minority carrier storage effect, rapid switch speed, high workingfrequency, small switch loss, fine thermal stability, etc. These advantages makeVDMOS has a more and more proportion in the power device field.During the VDMOS product design process, the main parameter we must regardare: breakdown voltage, Source-Drain on resistor, Gate threshold voltage, avalancheenergy, etc. Now on the market, there are all kinds of breakdown voltage size, such asdozens in low voltage、100-400V in medium voltage、400-800V in high voltage, or evenhigher with more than1000V. Dongguang micro electric attempt to product100vVDMOS on the basis of his mature600v high voltage and some200v VDMOS devices.In this paper, we use strip cell and double FLR structure, in order to get the feasibledevice structure, by using Process simulation software Tsuprem-4and Devicesimulation software Medici, we make a lot of simulation design and verification for theVDMOS, and we decided on a relatively satisfactory cell and terminal structure and aconcrete practical process. We finish the parameter design、process and physical domaindesign. After packaged, the finished products’ test results are satisfactory. From that,under the normal operating conditions, the average breakdown voltage is about110.2V.the average on-resistance is about0.185Ω, and the average threshold voltage is about3.5V.