The Research Of Novel Planar Spiral Inductor With Alternate Structure Applied In RFIC

The planar spiral inductors are widely used in the design of RFIC recently. Withthe development of IC process, the CMOS technology that is low in cost, easy tointegrate and with low power becomes the main process in the design of RFIC. How torealize the on-chip inductors with high Q factor and L value become a hotspot anddifficulty presently. A novel inductor model with alternate metal line width and spaceis presented in this paper focused on the drawback of the hardness to obtain the high Qfactor and high L value togather. The novel inductor model is proposed on the base ofnumerous literature reading.The relevant theoretical knowledge is introduced first, from which the lossmechanism is analyzed. Because of that, the solid theoretical foundation is providedfor us to optimize the inductor. Secondly, the factors which can affect the performanceof spiral inductor are simulated considering the structure and process parametersrespectively, and the optimization design principle is given. After that, based on theloss mechanism, a novel inductor model with alternate metal line width and space ispresented by considering the structure parameters. Many simulations are implementedunder HFSS10.0. The simulation results show that the Q factor and L value increaseby11%and36%respectively compared with the traditional inductor. The performanceof inductor is boosted. At last, the near field gain of the novel inductor is simulated forthe purpose of analyzing the influence of the inductor on the other devices near by,from which some reference can be obtained for the application of planar spiral inductorin RFIC.The CMOS process is introduced simply in the end. The machining procedure ofplanar spiral inductor is grasped for the later preparation.