Igbt Dynamic Characteristics Study Of The Construction Of The Test And Application In Induction Cooker

Power semiconductor devices are power electronics that used to Power transformation and Power control. It is an important part of power electronics which is used to confirm electronic system efficiency, scale and cost. Among them, the IGBT (Insulated Gate Bipolar Transistor) is undoubtedly the most successful innovative power transistor in the past30years. IGBT is easy to control with low cost, strong and durable due to its unique structure. IGBT devices are widely used in the consumer, industrial, transportation, lighting, and medical equipment etc. This thesis mainly studies the dynamic and static states of IGBT test and the application based on the induction cooker.This paper first studied the development of IGBT and made a review, then discussed the working principle of IGBT and equivalent circuit. Using N type IGBT to do a detailed analysis of the principle of IGBT for example. From physical and circuit levels explain its basic principle in detail. The various types of IGBT equivalent circuits are studied in-depth.Then the paper studied IGBT device static characteristic and dynamic characteristic. The static characteristic mainly studies the transfer characteristics and output characteristics. Next the IGBT modeling and the application of the induction cooker were discussed in the paper. Based on Shanghai Belling company laboratory equipment and the dynamic characteristic test of IGBT above, providing the application, research and development of IGBT data and experimental support. Exploring the internal causes of IGBT is breakdown in the application of the induction cooker. Introducing the numerical model, analytical model and behavior model of IGBT modeling, further more introduced the method of IGBT simulation based on Pspice.This paper studies show that for the use of IGBT experiment device, the rise time is about600to800ns, decrease time is about520ns, and a cycle is50us for total time. IGBT VCE amplitude is about1050V, IC amplitude is about45A, and time is about23.5us. Founding that transient current impulse is one of the most important factors that make the device IGBT breakdown in the application of induction cooker.