Design Of Ka-band MMIC Low Noise Amplifier

This paper studies the Ka-band MMIC low noise amplifier circuit research and design,and the content includes: MMIC technology background and characteristics, relativedevice model analysis and process flow profile, finally detailed introduces the designprocess of the amplifier.The paper adopts the0.15μm GaAs Low Noise pHEMT process line provided byTaiwan WIN semiconductor company, using ADS software simulation designs a34~36GHz Low Noise amplifier. The amplifier uses three amplification topology, single-stageamplifier designed for different design goals and each of them with input and outputmatching networks, at the same time, in order to facilitate a cascade to all stages arematched to50Ω, and the first stage join the source of negative feedback to improve thestability. According to the particularity of MMIC design, using two kinds of differentoverall matching method, determined the bias circuit and matching circuit with a parallelbranch line to achieve the matching of the network design method by comparing, becauseit can effectively reduce the chip area.Finally, the finished product of Ka-band MMIC low noise amplifier performing well inworking band whose noise figure is less than2.3dB, gain is more than27dB, the flatness ofgain is less than±1dB, and input/output voltage standing wave ratio is less than1.45,achieves the expected design goal.