Epitaxial Layer Process Control And Application

With the development of science and technology, to create more complexhigh frequency high power devices, you need to decrease the collector seriesresistance, reduce the conduction voltage drop and the influence of factors suchas power consumption, so the chips of grass-roots requirements become morestringent, wafer i s more even, more perfect, than the original silicon chipsubstrate with certain electrical properties. Epitaxial layer position in the actualproduction will be increasingly important. In the actual production process notonly need to precisely cont rol the parameters also ne ed constant updates onequipment and technology for extension of. How to control various parameters,are in the production of high-quality epitaxial la yer to beco me extremelyimportant issues. In order to make production of epit axial layer can meet therequirements of the w afer under control range, the main role of the epitaxiallayer, process performance, technology and process flow, temperature, pressure,and other parameters on t he actual production of epit axial layer thickness,uniformity, stacking faults, defects, the impact of factors such as make, as wellas the research and analysis of epitaxial layer devices. So that we may be undercontrolled conditions to produce higher-quality epitaxial la yer. This articleusing a literature analysis, history research methods, combining theoretical andpractical analysis of three kinds of methods conducted a study on the growth ofepitaxial layer. Focuses on the epitaxial layer and relevant information,including status of Epitaxial layers of semiconductors and the role of epitaxiallayer technology, epitaxial layer device and Epitaxial layers on the influence ofsome parameters on the epitaxial layer in ac tual production. Also listed twoproblems in actual work, as well as solutions to discuss the problems we resolvethe issue.