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All-Solid-State Nd:LuVO4Laser Operating At1343Nm Under Diode Pumping Into The Emitting Level

Posted on:2013-10-04Degree:MasterType:Thesis
Country:ChinaCandidate:J F ChenFull Text:PDF
GTID:2248330377955598Subject:Optics
Abstract/Summary:PDF Full Text Request
Diode pumped solid state laser mainly used indirect pump, pumping the active ions from the level which higher than the upper lasing level to the upper lasing level with nonradiative decay process. Nonradiative decay process will generate heat, decreasing the out power and the slope efficiency, and decreasing the beam quality. Direct pump can solve the problem of the heat generation. It pump the active ions to the upper lasing level without nonradiative decay process, decreasing the heat generation, increasing the out power and the slope efficiency, increasing the beam quality.The paper studies on Nd:LuVO4laser operating at1343nm under880nm direct pumping. This paper has the following main aspects:1. Introduced the theory of direct pump and indirect pump, and their advantages and disadvantages.2. Introduced characteristics of Nd:LuVO4.3. Compared with the808nm indirect pumping, direct pumping has advantages of increasing the slope efficiency, and decreasing the heat generation and the threshold.4. Comparative experiment under880nm direct pumping and809nm indirect pumping, we chose the Nd:LuVO4crystal with the length8mm and doping concentration of0.4at.%. Under880nm pumping, the output power was7.0W while the absorbed pump power was16.9W, with the optical conversion efficiency of41.4%with respect to the absorbed pump power.The slope efficiency and the threshold with respect to the absorbed pump power under809and880nm pumping were34.9%,44.5%and1.02W,0.93W, respectively. It shows that880nm direct pumping can increase the slope efficiency and decrease the threshold.
Keywords/Search Tags:all-solid-state, direct pumping, Nd, LuVO4crystal
PDF Full Text Request
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