The Influence Of Probe Wanering To Testing Sheet Resistance Of Large Silicon And Research On Simulation Technology

Resistivity is a very important performance index in semiconductor material,because it will influence the performance of the device directly.We can get some important information such as the doping content from measuring it. Therefore, testing the micro-area sheet resistance has become an important process inchip processing. Four-point probe technology is a special method to measure the resistivity of semiconductor. As a means of IC testing, four-probe technology has important applications, inorder to meet the needs of the rapid development of integrated circuits,we have proposed higher testing requirements: not only simple, fast, accurate, and must meet the deeds of each process. This requires not only need perfect design tools and stable producing capacity,and also need reliability,high precision testing means.This paper first introduces the background of four-probe technique, research status and future trends both at home and abroad,application and classification of four-probe method,and analyzes the principles and characteristics of various methods, focus on the conventional liner four-probe method ,modified Van Der Pauw method and Rymaszewski method .Analysis the influence of probe wavering using liner four-probe method and the square four-probe method,and compared them. Improved the four-probe test system,last,simulating.The innovation of this topic as follows:One,systematic analysis of the influenctial factors in the process of four-probe,discuss the correction using finite element method;two,make further research on the detail of the test,including the choice of the test current,probeand the position of the probe;three, analysis the influence of probe wavering using liner four-probe method and the square four-probe method,and compared them;four, using simulation technology to design four–probe system,and realized a test for the measurement,and calculated error of the probe wander.