Study On Silicon Sheet's Micro-Area's Resistance Stability Measured By Four Point Probe Method

With the development of electronic technology, the size of the electronic equipment becomes smaller and smaller, the degree of integration higher and higher. This needs the stability of the electronic performance of the semi-conductor material--core material. Measurement is necessary to guarantee the material performance, and the stability is vital to make the statistics accurate. This paper, out of this purpose, studies the stability of silicon sheet's micro-area's resistance by measuring with four-probe method.This paper argues the importance of the micro-area's resistance measurement and summarizes the features of the methods that have been worked out; analyzes, in detail, the basic principles of four point probe measurement technology, and, in particular, talks about the conventional straight line four point probe, modified Van Der Pauw methods and modified Rymaszewski four point probe methods; studies the factors that affect the measurement accuracy; analyzes the impact on square four point probe measurement by probe move; analyzes the common interferences in the measurement and puts forward the corresponding solution and gives suggestion to improve the square four point probe measurement instrument.The original points of this paper comprise:1. systematic analysis of the influential factors in the process of four-probe;2. formula of the impact of the probe move on the square four-probe method;3. improvement scheme of the existing square four point probe measurement apparatus.