Experimental Study Of The Temperature Measurement For Micro Stacked Die Chip By Using Infrared Radiation Thermometer

This paper is mainly about the study of using the MP/MB infrared radiation thermometer to measure the temperatures of the heat stage and the structural surface of the stacked die chip. The minimum measuring size of the infrared radiation thermometer was φ0.6mm, the single chip size was4mmx2mmx0.24mm (length×width×height). Set the temperature of the heat stage, temperature data of the different zones of the heat stage surface was acquired, and then put the stacked die chip on the heat stage to attain the different temperature data of the different zones of the stacked die chip. By analyzing the two main time periods, one in the beginning that temperature changed a lot and another in the steady condition that temperature can be seemed as a constant, the results of how the temperature of the stacked die chip changed was acquired, and the reason why different area of the stacked die chip was so different was analyzed. Function filing was further used for the temperature rise curves. It was found that modified Malthus function can be used to describe the temperature change of the upper chip of the stacked die chip properly. This paper mainly included:Initially, the methods of the temperature measurement and the principle of the infrared radiation thermometer were introduced. A MP/MB infrared radiation thermometer was chose to acquire the temperature data of the surface of the heat stage, experimental results included the uniformity of the rising of the temperature curves; fluctuating temperature changes of the steady condition of the heat stage; and the different temperature of the different area.Additionally, the temperature measurement of the stacked die chip was carried out, and the temperature data was processed by the Matlab software. The temperature measurement of the stacked die chip was divided into two groups: the first one was to measure the temperature of the cantilever and non-cantilever area of the upper chip of the stacked die chip; the second one was to measure the temperature of the upper chip and the lower chip. The experiment results included how the temperature change of the different area of the stacked die chip; and the reason why the temperature of the cantilever and non-cantilever area was different, and why the temperature difference between the upper and lower chip was high.Finally, different fitting functions were used to describe the how the temperature change of the stacked die chip. Compared with the measurement data, it was found that the modified Malthus function can be used to describe the temperature change of the stacked die chip properly.The experimental results would be helpful to the further study of the bonding mechanism.