| In this paper, heating resistor was made by the metal thin film, cantilever beam was prepared by use of single crystal silicon. Heating resistor has been simulated, The micromachining processes have been explored. The conclusions are as follow:1. By means of the comparison of metal material and device structure, Pt and Ti were chosen as the heating resistor materials, and the cantilever beam structure as heat insulation structure. The FEM software was used for heating resistor’s steady and transient thermal analysis. The results showed that, the double winding resistance figure had higher temperature response than the double helix resistor and a wire wound resistor, but the temperature uniformity became worse; the frequency response can be about10Hz.2. Based on the experimental conditions of the repeated attempts, the sputtered metal film pressure, current, voltage, and other technological conditions for preparation were determined, and the concentration, temperature, speed and other process conditions of Wet etching was chosen. At the same time, the key process in the preparation of the infrared radiation source was study:The corrosion fixture with good sealing has been designed, the supporting structure was released by use of a combination of dry and wet etching process. The process conditions and method have played a very important role in the process of the preparation of infrared radiation sources.3. The measurement system of infrared radiation source has been built, the steady state and dynamic response have been tested. The results showed that, the support structure thickness had a great influence on infrared radiation source performance; the frequency response was about13Hz in the50%modulation depth. At the same time, infrared radiation source with different cantilever beam and heating resistor has been tested, and the curve of the output voltage has been obtained. By contrast, the device with good mechanical properties and thermal properties was selected. |
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