High Power Based On Pin Diode, The Ultra Broadband, High Isolation Microwave Throw Switch More Research

In radar, communication and other microwave system, the control of signaltransmission is usually neede. PIN switch is a major microwave semiconductor controlcomponent, be confined to the assembling’s technics，the high power, broadband andhigh isolation are the design difficulties lie. The veracity of the emulation is up toaccurate analyse of these factors as series resonance and channel inter-coupling,whichaffect the capability of the switch circuit.This thesis introduces the basic theory of PIN diode and switch in brief andproposes a simplified simulation circuit model after analyzing a few causes which affectthe specification of PIN switches. Then taking the method of2Dimension,3Dimensionhybrid simulation the thesis introduces the design process of simulation andoptimization on the broadband switch circuit employing the ADS, HFSS. Based on thecircuit model, a SP4T PIN switch with high power, broadband and high isolation isrealized. The measuring results show that insertion loss is less than3dB within theworking frequent4-18GHz, the isolation is more than70dB, SWR is less than1.8andthe switch delay time is less than120ns，those basically reach the thesis requirement.The thesis specifies the assembling and testing process of the switch，gives the practicaltesting outcome. And also take example for SP4T PIN switch, the thesis brieflyintroduces two different4×4switch matrix and their application.