| Avalanche photodiode’s characteristic of high responsiveness、fast response and small size makes it be widely used in the low light signal field.It realize multiplier effect by generateing carriers with the help of vias voltage.It’s characteristic parameters are highly correspond with vias voltage、temperature and the luminance of ambient light signal.So,this paper make a research on the dynamic characteristic of Si-APD photodetector.On the base of in-depth investigation of information,this paper explains the meanings of dynamic characterize parameters of Si-APD Photodetector with preamplifier and build up an experiment platform that can be used to mearsure the parameters at different temperatures.This experiment first measure the parameters of a kind of Si-APD Photodetector with preamplifier-C30950E at room temperature.It tums out that the work voltage is 308V,voltage responsivene-ss is 8.6×105V/W and NEP is 1.3×10-14W/HZ.The measurement results are good corr-espond with factory parameters.It proves the experiment is feasible.After proving the feasibili-ty of the experiment,this paper measure and analysis the parameters at different temperatures and different ambient light.The result shows work voltage drops when the background optical signal goes up,significantly different from the values of manufacture parameters,the divercific-ation of the parameters are very important in the optimum design of photodetector system..In addition,when the lumen of ambient light inceases,in the best work state,voltage responsivenes-s drops,dark current and NEP increases; With temperature increases, work voltage increases, the work votage -temperature coefficient is about 2.4V/℃,and in the best work state,voltage responsiveness drops,NEP and dark current increases.In summary,the research on this paper has reference value in grasp the dynamic characteristic of Si-APD optical detector with preamf-ier which is good for optimum design of Si-APD optical detector with preamfier. |
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