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The Research In Millimeter-wave Generation Technology Based On F-P Semiconductor Laser Injection Locking Technique

Posted on:2013-04-08Degree:MasterType:Thesis
Country:ChinaCandidate:H J DuFull Text:PDF
GTID:2248330371490687Subject:Electronics and Communications Engineering
Abstract/Summary:PDF Full Text Request
With the rapid development of Multimedia IT, the era of information explosion has come. The surge in demand for information, wireless spectrum resources become inadequate. In order to solve this problem, the wireless communications can only to develop a higher frequency carrier millimeter-wave communications. In the millimeter-wave communication network, radio over fiber system is the key technology in the millimeter-wave wireless communi-cations which combining optical communication technology and millimeter-wave communication technology, has extensive application prospects in the field of military and wireless communications, has become one of the most important point on international.Millimeter-wave signal generation method, the fiber dispersion effect on the transmission performance and low cost of base station equipment are the three keys technologies of the ROF system, millimeter-wave signal generation as one of the key technologies in the ROF system, has become a research hotspot. The generation of high-frequency millimeter-wave signal mainly rely on the optical generation techniques until now, and then converted to electrical signals by the photo-dector. The technology of generating millimeter-wave by optical way is relative simple, easy to implement, and achieving a very wide range of frequency modulation.There are many ways of optical generation millimeter-wave. But the cost prices of these ways are high generally. This paper studies the generation of the millimeter-wave signal by the optical way which based on relevant literature, we designed two programs including self-seeding injection-locked of Fabry-Perot semiconductor using Two Fiber Bragg Gratings and self-seeding injection-locked of Fabry-Perot semiconductor using Moire grating. By the large number of experimental phenomena observed and the data collected, the side mode suppression ratio of the dural-wavelength output is obtained to be better than27dB in the tuning range of9.17nm, the side mode suppression ratio of the dural-wavelength output is obtained to be better than30dB in the tuning range of11.7nm. We can verify the feasibility of these two designs and affirm the value of the two design programs. These two programs can provide relatively pure millimeter-wave signal to the field of optical fiber communicati-on. The principle and the system structure are simple, and the costs can be cut dramatically.
Keywords/Search Tags:millimeter-wave, F-P semiconductor laser, grating, injection-locking, the beat frequency, Optisystem7.0
PDF Full Text Request
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