Study On Electric-field Controlled Magnetism Of Magnetic Oxide Semiconductor

In recent years,due to the rapid development of information storage technology,many researchers have conducted extensive and in-depth explorations in new concept random memory,which have high-density,high-speed,non-volatile,and low-energy.The magneto-electric coupling effect in the resistive random access memory(RRAM)not only provides the impetus for the development of multi-level storage,but also lays a good theoretical foundation for the development of multi-functional devices.Generally speaking,the current-induced Joule heating effect in RRAM during the continuous erase process cannot be ignored.It will increase the operating temperature of the RRAM device and the device configuration may be degraded.This is detrimental to reducing energy consumption and extending the life of the RRAM device.We know that if there is an electric field,there must be a voltage,but not necessarily a current.If we can control the magnetic properties of the RRAM device though an electric field generated by an applied voltage,it will not only reduce the energy loss and prolong the life of the RRAM device,but also provides a new idea in the RRAM device's future research.This paper mainly carried out the following research:By applying an external high-voltage polarized power to the parallel plates,a uniform electric field is generated.The prepared thin film sample is left in a uniform electric field for a period of time,and then magnetic measurement is performed to discuss the effects of electric field controlled magnetism without electric current in the oxide magnetic semiconductor.1.The ZnO thin film samples with different growth temperatures,different sputtering argon-oxygen ratios and different substrates were prepared by magnetron sputtering technique,and the effects of electric field controlled magnetism without electric current were studied in the ZnO/substrate structure.Through a series of studies,it is concluded that the effects of electric field controlled magnetism without electric current in the ZnO thin film is different under different growth conditions,which lays the foundation for finding the ideal sample preparation conditions;meanwhile,the structure of the experimental sample is improved and the top electrode was added to further study the electric field controlled magnetism of the RRAM device structure.2.The Co:ZnO thin film samples with different Co doping concentration,different growth temperatures,different sputtering times and different substrates were prepared by magnetron sputtering technique,and the electric field controlled magnetism of the Ag/Co:ZnO/substrate device were studied,respectively.3.The C:ZnO thin film samples with different C doping concentration,different growth temperatures,different sputtering times and different substrates were prepared by magnetron sputtering technique,and the electric field controlled magnetism of the Ag/C:ZnO/substrate device were studied,respectively.