New Cmos Reference Research And Design

In the electrical information world, how to design a high stable electricity referencehas become the fundamental problem in electronic industry. As the microelectronicsdeveloping for decades more and more portable electronic devices become available.What we should consider are not only the size of those devices but also the lowvoltage and low consumption. The most important part in a whole chip is thereference part. Whatever in analog design, digit design or in SOC design, a goodreference would determine the upper performance of the whole system. In today’ssociety semiconductor industry has developed into Nano level and the submicronlevel is the dominated criterion in standard CMOS technology such as0.18um CMOStechnology. For this reason, the traditional reference with bipolar transistors cannotmeet the development of circuits.This paper mainly discusses the physical characteristic of MOSFET in sub-thresholdregion and designs a voltage reference with this characteristic. At last, a high rankcompensation voltage reference is given with simulation and analysis. The main partof this paper is:1. Analyzing the physical structure and characteristic of MOSFET in sub-thresholdregion and get the result which influencing the threshold voltage of MSOFET.Then finding out the relationship of gate-source voltage and drain-source currentin MOSFET, and making analysis of the temperature coefficient of them.2. Based on the standard CMOS technology and using the difference of gate-sourcevoltage in different MOSFET and voltage modulation technology to design avoltage reference which with high PSRR and low temperature coefficient innormal temperature region.The voltage reference opposed in this paper using symmetrical design method whichhas41.2ppm/℃between-30℃and-90℃,0.81V reference voltage output between0.9V and2.0V supply voltage and65dB PSRR in the typical situation. The proposedreference has very good portability and competitive capacity in portable electronicdevices.