Electrical And Optical Properties Of CZTS Thin Filmsprepared By Single Step Electrosynthesis On ITO Substrate

thin film is a new type of materials solar cells. Its band gap is about1.4-1.5eV, just as the same as the best band gap for unijunction solar cells(1.5eV).Its absorption coefficient of light is104cm-1,which makes it may have a high photoelectric conversion efficiency.The Cu2ZnSnS4(CZTS) thin films have been electrodeposited onto ITO glass substrates in one step,in constant pressure mode at room temperature. Find the most suitable depositing condition for CZTS thin film.Study the grow situation of thin films and its electrochemical properties by linear scanning. Analyze the differences between the constant pressure mode and constant current mode when depositing the CZTS thin film. The structural, morphological and the electrical and optical properties of the CZTS thin films have been studied using X-ray diffraction (XRD),scanning electron microscopy (SEM),Hall effect measurements and other optical absorption techniques. The result shows that these properties are strongly dependent on the post-annealing treatment. After annealing thin films at550℃in nitrogen atmosphere for1hour, it has got better surface flatness. And also, the direct band gap energy for the CZTS thin films is found to be about1.5eV; The carrier concentration is similar with CIGS component.