| Recent years, the characteristics of laser-induced plasma were systematic studied through changing parameters of irradiance laser (laser wavelength, pulse duration, fluence etc), background atmosphere (species and pressure of the background gases), target (solid, liquid, and gas) and so on. At the present time, there are more researches on the characteristics of laser-induced plasma for metallic material, but very few for semiconductor. Semiconductor germanium (Ge) is widely used in the fields of infrared technology, optical fiber communication and solar cells, especially in military optoelectronic countermeasure for its important application prospect. Therefore, it is needed to understand and master the characteristics of plasma induced by high power laser irradiance on Ge.In this paper, the characteristics of laser-induced plasma was carried out based on the study on the spectrum of laser-induced germanium plasma using different wavelengths under different environmental conditions. The main works are as follows:In air condition, the germanium target was irradiated by nanosecond pulse laser at the wavelength of1064nm and532nm respectively, and the influence on the characteristics of laser-induced germanium plasma was studied using time-space resolved emission spectroscopy method. Under different wavelengths, the law of variety of plasma parameters (spectral intensity, electron density, and Full Width Half Maximum of the spectrum etc) and time-space evolution characteristics were given. In vacuum condition, the germanium target was irradiated by nanosecond laser pulses at the wavelength of1064nm, and the plasma characteristics under different pressure were studied by using time-space resolved emission spectroscopy method. The laws of the change of plasma parameters (spectral intensity, electron density, Full Width Half Maximum of the spectrum etc) with gas pressure and the time evolution laws of electron temperature were given. |
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