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Study On Preparation And Optical Gas Sensing Characteristics Of Ti-doping Tungsten Oxide Films By Co-sputtering

Posted on:2013-06-16Degree:MasterType:Thesis
Country:ChinaCandidate:Y P HuFull Text:PDF
GTID:2230330374961618Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Nano tungsten oxide films material is an important functional material. It isinvestigated and exploited broadly because of its gaschromic property, electrochromicproperty, photochromic property, etc.Especially gaschromic property is applied to gassensors extensively.The Tungsten oxide thin films were deposited on glass substrates by DC-reactivemagnetron sputtering technology.The Ti-doping Tungsten oxide films were deposited byco-sputtering. and then Heat treated at350℃,450℃a nd550℃.Optical properties、micro-structural properties of Tungsten oxide films, Ti:WO3thin films were studied.The films were characterized with step devices、ultraviolet visible transmittanceSpectrophotometer (UV-Vis) and X-ray diffraction (XRD). As results of study, withthe spattering power of titanium increased,films deposition velocity becomes rapidness.The film with oxygen partial pressure is30%、the spattering power of titanium is40wand annealed with450℃crystallizes well. The Tungsten oxide thin film with oxygenpartial pressure is30%and annealed with450℃crystallizes well among the comparedof different oxygen partial pressure. As the Heat treated temperature increased, theTungsten oxide thin amorphous films began to crystallize. And finally, the Tungstenoxide thin films with monoclinic structure were obtained, which grew merit on thedirection of (200). The Tungsten oxide thin film with oxygen partial pressure is30%and annealed with450℃crystallizes better than that annealed with550℃.The optical gas sensing properties of WO3thin films and Ti-doped WO3thin filmswere studied. The optical gas sensing properties of the films in various depositedconditions were tested and analysised to C2H5OH gas of600ppm、H2of600ppm andNO2of600ppm. The optical gas sensitivity mechanism of WO3and Ti-doped WO3films are discussed in this thesis. As results of study, the WO3thin film with oxygenpartial pressure is30%and without heat treatment was performance excellent of opticalgas sensing characteristics in C2H5OH gas at300℃, which was senseing well in H2gasat350℃. The Ti-doped WO3film with oxygen partial pressure is30%、the spattering power of titanium is40w and without heat treatment was performance excellent ofoptical gas sensing characteristics in NO3gas at300℃. The Ti-doped WO3film withoxygen partial pressure is30%、the spattering power of titanium is10w and withoutheat treatment has goog selectivity to H2gas at300℃. The Ti-doped WO3film withoxygen partial pressure is30%、the spattering power of titanium is40w and withoutheat treatment has goog selectivity to NO3gas at300℃.The sensitve part of the filmswas in the range of380nm to550nm region. So, the study has definite reference valuefor new generation of " gas-optical " sensor.
Keywords/Search Tags:Ti-doping tungsten oxide films, Co-sputtering, Ti-doping, micro-structual, optical gas sensing characteristic
PDF Full Text Request
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