Electron Emission Characteristics Of C-Ti Granular Films

Surface-conduction electron-emitter display(SED), which is a kind of field emission display(FED), has many advantages than other traditional flat panel displays. The SED showed better uniformity and stability than that of the traditional FED because of its flat fabrication process. With the advantages of high-quality performance and lower cost, SED attracted more academic research and developers.Magnetron sputtering was used to prepare carbon-titanium granular films as the electron emission materials of SED. Main research content are as follows:preparation process of granular film, device fabrication, and testing and analysis of the electron emission characteristics. After optimization of the preparation parameters, electron emission had been improved under a large number of repeated experiments. The results of experiments are as follows:①The effect of the content ratio of target, distance of the target and substrate, and working pressure on the granular properties was studied. The results showed that the 90% uniformity was achieved with substrate-target distance of 40mm. With the increasing of working pressure, the largest deposition velocity was up to 2.02nm/s. With the increasing of the proportion of titanium in target, the deposition velocity increased and the resistivity significantly decreased.②The morphology, chemical composition, and bond structure of the granular films were characterized by SEM, EDS and XPS. The results show that the film surface is smooth. Ti and C components ratio was about 105. XPS spectrum shows that the granular films are composed of Ti and C, and the C element part of the formation of C-C bond, part of the formation of Ti-C bond. Part of the Ti element bond to C, another part in the form of simple substance.③The lithography process parameters were optimized. The results show that clear graphics can be formed with 10min prebake time,60s exposure time,34s development time, and 15min post-bake time. ④The effect of the content proportion of target and device structures on electron emission was researched. The nano-gap structure and stable emission current was detected darter electroforming.7.6μA emission current was detected with the C:Ti ratio of 3:1 and the emission efficiency was up to 1‰. Nano-gap and stable emission current were easily acquired when the electrode distance is100μm and the width of emitter is 5μm.⑤F-N plot for Ie-Vf properties showed that the electron emission mechanism should be field emission.