ZEMAX Simulation Of The Optical Elements In The Light Source For The Lithography Machine

Extreme ultraviolet lithography is considered as the next-generation lithography technology international widely, which offers a breakthrough of 22nm node. However, it is difficult to obtain high-power, high quality EUV light which restricted the development of EUVL technology. According to the forecast, the required EUV output power is 115W for a high volume manufacturing EUV lithography tool. At present, the most advanced mature lithography technology is still 193nm immersion lithography.The initial spectrum width of 193nm excimer laser is hundreds of pm. Such broad spectral bandwidth cannot satisfy the requirements of lithography. Therefore, the initial pulse needed line-narrowing. The prism and grating are used widely in line-narrowing. In this thesis, a prism beam expander with three prisms (CaF2) was simulated by the optical design software ZMEAX. The size of the three prisms increases in turn which separate wavelength, reduce the beam divergence, beam energy density and reduce the damage of grating. It provides the basis for wavelength selection in line-narrowing.In addition, the LPP EUV light source collection mirror was simulated. The parameters of the 600 mm diameter prolate ellipsoid with a solid angle of 5 sr and the magnification of the prolate ellipsoid were calculated. The rotating ellipsoid collector mirror was simulated with ZEMAX. The radius of the light source are 50μm, 75μm and 100μm respectively, the diameter of the collector mirror are 300mm, 400mm, 500mm, 600mm, 700mm respectively. The etendue and the magnification of the image are calculated. The influence on the drift of the EUV source in the Y direction was discussion when the diameter of the collector mirror is 300mm and 600mm and the radius of the EUV source are 50μm, 75μm and 100μm; The influence on the drift of the EUV source in the Z direction was claimed when the diameter of the collector mirror is 300mm and 600mm and the radius of the EUV source are 50μm, 75μm and 100μm. The changes of spot size and trends at IF points are given with the drift of EUV source. It provides a valuable basis for making the ellipsoid collect mirror and liquid droplets generator.